PART |
Description |
Maker |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
|
General Electric Solid State
|
AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes x8 Flash EEPROM 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
|
Advanced Linear Devices, Inc.
|
IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State GE Solid State
|
2SK1700 |
Drain Current ?ID= 5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1703 |
Drain Current ?ID= 5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK846 |
Drain Current ?ID=3A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1601 |
Drain Current ?ID= 3A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1600 |
Drain Current ?ID= 3A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1211 |
Drain Current ?ID=2.5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1460 |
Drain Current ?ID=3.5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1224 |
Drain Current ?ID=4A@ TC=25C
|
Inchange Semiconductor ...
|